Charged particle single nanometre manufacturing

• Philip D. Prewett,
• Cornelis W. Hagen,
• Claudia Lenk,
• Steve Lenk,
• Marcus Kaestner,
• Tzvetan Ivanov,
• Ahmad Ahmad,
• Ivo W. Rangelow,
• Xiaoqing Shi,
• Stuart A. Boden,
• Alex P. G. Robinson,
• Dongxu Yang,
• Sangeetha Hari,
• Marijke Scotuzzi and
• Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

• anodic oxidation scanning probe lithography (oSPL) [117][118] a water meniscus is formed between the tip and the sample due to an applied voltage. Inside this water meniscus local oxidation of the sample takes place. The resolution is limited for dSPL by the tip size and tilting during the ploughing

• interaction mechanisms [108][109][110][111][112]. Static or dynamic ploughing lithography (dSPL), for example, utilizes the mechanical interaction between the tip and the resist, comparable to scratching [113][114]. In thermal SPL (tSPL) a heated AFM tip is used to evaporate the polymer [115][116]. In local

Nanoscale electrochemical response of lithium-ion cathodes: a combined study using C-AFM and SIMS

• Jonathan Op de Beeck,
• Nouha Labyedh,
• Alfonso Sepúlveda,
• Valentina Spampinato,
• Alexis Franquet,
• Thierry Conard,
• Philippe M. Vereecken,
• Wilfried Vandervorst and
• Umberto Celano

Beilstein J. Nanotechnol. 2018, 9, 1623–1628, doi:10.3762/bjnano.9.154

• junction as another possible origin of modified transport characteristics. Especially in air, local anodic oxidation is well known to limit C-AFM capabilities and complicate the results interpretation in the case of silicon [16]. For this reason, UHV conditions have been investigated in order to increase

Boosting the local anodic oxidation of silicon through carbon nanofiber atomic force microscopy probes

• Gemma Rius,
• Matteo Lorenzoni,
• Soichiro Matsui,
• Masaki Tanemura and
• Francesc Perez-Murano

Beilstein J. Nanotechnol. 2015, 6, 215–222, doi:10.3762/bjnano.6.20

• nanofabrication methods based on scanning probe microscopy have been developed during the last decades. Local anodic oxidation (LAO) is one of such methods: Upon application of an electric field between tip and surface under ambient conditions, oxide patterning with nanometer-scale resolution can be performed

• of field-induced, chemical process efficiency. Keywords: carbon nanofiber; dynamic mode; local anodic oxidation; nanopatterning; Introduction Scanning probe lithography (SPL) is increasing its relevance among currently employed methods towards miniaturization and investigations at the nanometer

• logically concerned silicon, as it is the ubiquitous material of modern electronics [6][7]. The application of an electric field between a conductive tip and a silicon substrate under ambient conditions can generate the local anodic oxidation (LAO) of the silicon surface very precisely; intrinsic silicon

Selective surface modification of lithographic silicon oxide nanostructures by organofunctional silanes

• Thomas Baumgärtel,
• Christian von Borczyskowski and
• Harald Graaf

Beilstein J. Nanotechnol. 2013, 4, 218–226, doi:10.3762/bjnano.4.22

• coverage of the dye molecules on length scale that is not accessible by standard AFM measurements. Keywords: AFM lithography; amino-functionalization; local anodic oxidation; octadecyl-trichlorosilane; silicon oxide nanostructures; Introduction Local anodic oxidation (LAO) nanolithography is a reliable

• functional nanodevices. Depending on the structure type, a multitude of routes have been proven applicable in a substantial number of publications [2][5][6][7][8][9]. In general, the different binding mechanisms that can be used for the selective functionalization of local anodic oxidation patterns on

• considered, as this technique enables a controlled formation of highly ordered films under appropriate conditions [41][42][43]. Experimental The local anodic oxidation experiments were carried out on 1 × 1 cm2 pieces of weakly doped n-type silicon (resistivity: >3000 Ω·cm, Fraunhofer ENAS, Chemnitz, Germany

Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography

• Farhad Larki,
• Arash Dehzangi,
• Alam Abedini,
• Ahmad Makarimi Abdullah,
• Elias Saion,
• Sabar D. Hutagalung,
• Mohd N. Hamidon and
• Jumiah Hassan

Beilstein J. Nanotechnol. 2012, 3, 817–823, doi:10.3762/bjnano.3.91

• microscope based lithography (SPL) via local anodic oxidation (LAO) was reported previously [7][8][9]. The experimental characteristics were also investigated and single-gate and double-gate structures were compared [10]. The principle of SPL on silicon-on-insulator (SOI) was described for the first time by

• channel and the source/drain extension in order to obtain a better understanding of the device performance through the pinch-off mechanism. Methodology The DGJLT structure was physically fabricated by using the local anodic oxidation (LAO) process and two wet-chemical-etching processes. Pre-oxidation